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| SPC4703 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC4703combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an DFN3X2-8L package. The Trench MOSFET is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. The Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. APPLICATIONS Battery Powered System DC/DC Buck Converter Load Switch Cell Phone FEATURES P-Channel -20V/-3.4A,RDS(ON)= 90m@VGS=-4.5V -20V/-2.4A,RDS(ON)=120m@VGS=-2.5V -20V/-1.7A,RDS(ON)=155m@VGS=-1.8V Schottky VKA (V) = 20V, IF = 1A, VF<0.43V@1.0A Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability DFN3X2-8L package design PIN CONFIGURATION( DFN3X2 - 8L ) PART MARKING 2008/05/15 Ver.1 Page 1 SPC4703 P-Channel Trench MOSFET with Schottky Diode PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 ORDERING INFORMATION Part Number SPC4703DF8RGB Symbol A A S G D D K K Description Schottky Anode Schottky Anode MOSFET Source MOSFET Gate MOSFET Drain MOSFET Drain Schottky Cathode Schottky Cathode Package DFN3X2- 8L Part Marking SPC4703 SPC4703DF8RGB : Tape Reel ; Pb - Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted) Parameter Drain-Source Voltage Gate -Source Voltage Continuous Drain Current(TJ=150) Pulsed Drain Current Schottky Reverse Voltage Continuous Forward Current Pulsed Forward Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient T 10sec Steady State TA=25 TA=70 TA=25 TA=70 TA=25 TA=70 Symbol VDSS VGSS ID IDM VKA IF IFM IS PD TJ TSTG RJA -1.4 -20 12 -3.5 -2.8 -15 20 1 0.7 10 Typical P-Channel Schottky Unit V V A A V A A A W /W 1.25 0.8 -55/150 -55/150 65 95 0.9 0.6 2008/05/15 Ver.1 Page 2 SPC4703 P-Channel Trench MOSFET with Schottky Diode ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted) Parameter MOSFET Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA VDS=0V,VGS=12V VDS=-20V,VGS=0V IDSS VDS=-20V,VGS=0V TJ=55 ID(on) VDS-5V,VGS=-4.5V VGS=-4.5V,ID=-3.4A RDS(on) VGS=-2.5V,ID=-2.4A VGS=-1.8V,ID=-1.7A VGS=-1.25V,ID=-1.0A gfs VDS=-5V,ID=-2.8A IGSS -20 -0.35 -0.8 100 -1 -5 -6 0.075 0.095 0.120 0.185 6 0.090 0.120 0.155 0.210 V nA uA A Symbol Conditions Min. Typ Max. Unit Forward Transconductance MOSFET Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Schottky Parameters Forward Voltage Drop Reverse Breakdown Voltage Maximum reverse leakage current Junction Capacitance SchottkyReverse Recovery Time Schottky Reverse Recovery Charge S Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=-6V,VGS=-4.5V ID-2.8A 4.8 1.0 1.0 485 85 40 10 8 nC VDS=-6V,VGS=0V f=1MHz pF 16 23 25 20 ns VDD=-6V,RL=6 ID-1.0A,VGEN=-4.5V RG=6 13 18 15 VF VBR Irm CT Trr Qrr IF =1A IR = 500uA VR = 23V VR = 23V , TJ=70 VR = 10V VR = 0V , f=1MHz IF=1A, dI/dt=100A/s IF=1A, dI/dt=100A/s 20 0.43 0.47 0.1 1 V V mA pF 31 120 5.4 0.8 10 ns nC 2008/05/15 Ver.1 Page 3 SPC4703 P-Channel Trench MOSFET with Schottky Diode TYPICAL CHARACTERISTICS ( P-Channel MOSFET ) 2008/05/15 Ver.1 Page 4 SPC4703 P-Channel Trench MOSFET with Schottky Diode TYPICAL CHARACTERISTICS ( P-Channel MOSFET ) 2008/05/15 Ver.1 Page 5 SPC4703 P-Channel Trench MOSFET with Schottky Diode TYPICAL CHARACTERISTICS ( P-Channel MOSFET ) 2008/05/15 Ver.1 Page 6 SPC4703 P-Channel Trench MOSFET with Schottky Diode TYPICAL CHARACTERISTICS ( Schottky ) 2008/05/15 Ver.1 Page 7 SPC4703 P-Channel Trench MOSFET with Schottky Diode DFN3X2-8L PACKAGE OUTLINE Top View Bottom View Side View 2008/05/15 Ver.1 Page 8 SPC4703 P-Channel Trench MOSFET with Schottky Diode Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. (c)The SYNC Power logo is a registered trademark of SYNC Power Corporation (c)2004 SYNC Power Corporation - Printed in Taiwan - All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 (c)http://www.syncpower.com 2008/05/15 Ver.1 Page 9 |
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